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Semiconductor Devices : Physics and Technology (Record no. 462)

MARC details
000 -LEADER
fixed length control field 05241nam a2200253Ia 4500
001 - CONTROL NUMBER
control field 0001629
003 - CONTROL NUMBER IDENTIFIER
control field OSt
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20190313162040.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 170602s9999 xx 000 0 und d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9788126556755
028 ## - PUBLISHER NUMBER
Qualifying information 2016
Source Allied Informatics, Jaipur
040 ## - CATALOGING SOURCE
Language of cataloging English
Original cataloging agency BSDU
Transcribing agency BSDU
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381 52
Item number SZE
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name SZE, S M
245 #0 - TITLE STATEMENT
Title Semiconductor Devices : Physics and Technology
250 ## - EDITION STATEMENT
Edition statement 3rd
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Wiley India Pvt. Ltd. India
Place of publication, distribution, etc. New Delhi
Date of publication, distribution, etc. 2015,2013
300 ## - PHYSICAL DESCRIPTION
Extent 582
500 ## - GENERAL NOTE
General note This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Contents<br/>Preface<br/><br/>Acknowledgments<br/><br/> <br/><br/>Chapter 0 1 Introduction<br/><br/>0.1 Semiconductor Devices<br/><br/>0.2 Semiconductor Technology<br/><br/> <br/><br/>Part I Semiconductor Physics<br/><br/>Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium<br/><br/>1.1 Semiconductor Materials<br/><br/>1.2 Basic Crystal Structures<br/><br/>1.3 Valence Bonds<br/><br/>1.4 Energy Bands<br/><br/>1.5 Intrinsic Carrier Concentration<br/><br/>1.6 Donors and Acceptors<br/><br/> <br/><br/>Chapter 2 Carrier Transport Phenomena<br/><br/>2.1 Carrier Drift<br/><br/>2.2 Carrier Diffusion<br/><br/>2.3 Generation and Recombination Processes<br/><br/>2.4 Continuity Equation<br/><br/>2.5 Thermionic Emission Process<br/><br/>2.6 Tunneling Process<br/><br/>2.7 Space-Charge Effect<br/><br/>2.8 High-Field Effects<br/><br/> <br/><br/>Part II Semiconductor Devices<br/><br/>Chapter 3 p-n Junction<br/><br/>3.1 Thermal Equilibrium Condition<br/><br/>3.2 Depletion Region<br/><br/>3.3 Depletion Capacitance<br/><br/>3.4 Current-Voltage Characteristics<br/><br/>3.5 Charge Storage and Transient Behavior<br/><br/>3.6 Junction Breakdown<br/><br/>3.7 Heterojunction<br/><br/> <br/><br/>Chapter 4 Bipolar Transistors and Related Devices<br/><br/>4.1 Transistor Action<br/><br/>4.2 Static Characteristics of Bipolar Transistors<br/><br/>4.3 Frequency Response and Switching of Bipolar Transistors<br/><br/>4.4 Nonideal Effects<br/><br/>4.5 Heterojunction Bipolar Transistors<br/><br/>4.6 Thyristors and Related Power Devices<br/><br/> <br/><br/>Chapter 5 MOS Capacitor and MOSFET<br/><br/>5.1 Ideal MOS Capacitor<br/><br/>5.2 SiO2-Si MOS Capacitor<br/><br/>5.3 Carrier Transport in MOS Capacitors<br/><br/>5.4 Charge-Coupled Devices (CCD)<br/><br/>5.5 MOSFET Fundamentals<br/><br/> <br/><br/>Chapter 6 Advanced MOSFET and Related Devices<br/><br/>6.1 MOSFET Scaling<br/><br/>6.2 CMOS and BiCMOS<br/><br/>6.3 MOSFET on Insulator<br/><br/>6.4 MOS Memory Structures<br/><br/>6.5 Power MOSFET<br/><br/> <br/><br/>Chapter 7 MESFET and Related Devices<br/><br/>7.1 Metal-Semiconductor Contacts<br/><br/>7.2 MESFET<br/><br/>7.3 MODFET<br/><br/> <br/><br/>Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices<br/><br/>8.1 Microwave Frequency Bands<br/><br/>8.2 Tunnel Diode<br/><br/>8.3 IMPATT Diode<br/><br/>8.4 Transferred-Electron Devices<br/><br/>8.5 Quantum-Effect Devices<br/><br/>8.6 Hot-Electron Devices<br/><br/> <br/><br/>Chapter 9 Light Emitting Diodes and Lasers<br/><br/>9.1 Radiative Transitions and Optical Absorption<br/><br/>9.2 Light-Emitting Diodes<br/><br/>9.3 Various Light-Emitting Diodes<br/><br/>9.4 Semiconductor Lasers<br/><br/> <br/><br/>Chapter 10 Photodetectors and Solar Cells<br/><br/>10.1 Photodetectors<br/><br/>10.2 Solar Cells<br/><br/>10.3 Silicon and Compound-Semiconductor Solar Cells<br/><br/>10.4 Third-Generation Solar Cells<br/><br/>10.5 Optical Concentration<br/><br/> <br/><br/>Part III Semiconductor Technology<br/><br/>Chapter 11 Crystal Growth and Epitaxy<br/><br/>11.1 Silicon Crystal Growth from the Melt<br/><br/>11.2 Silicon Float-Zone Process<br/><br/>11.3 GaAs Crystal-Growth Techniques<br/><br/>11.4 Material Characterization<br/><br/>11.5 Epitaxial-Growth Techniques<br/><br/>11.6 Structures and Defects in Epitaxial Layers<br/><br/> <br/><br/>Chapter 12 Film Formation<br/><br/>12.1 Thermal Oxidation<br/><br/>12.2 Chemical Vapor Deposition of Dielectrics<br/><br/>12.3 Chemical Vapor Deposition of Polysilicon<br/><br/>12.4 Atom Layer Deposition<br/><br/>12.5 Metallization<br/><br/> <br/><br/>Chapter 13 Lithography and Etching<br/><br/>13.1 Optical Lithography<br/><br/>13.2 Next-Generation Lithographic Methods<br/><br/>13.3 Wet Chemical Etching<br/><br/>13.4 Dry Etching<br/><br/> <br/><br/>Chapter 14 Impurity Doping<br/><br/>14.1 Basic Diffusion Process<br/><br/>14.2 Extrinsic Diffusion<br/><br/>14.3 Diffusion-Related Processes<br/><br/>14.4 Range of Implanted Ions<br/><br/>14.5 Implant Damage and Annealing<br/><br/>14.6 Implantation-Related Processes<br/><br/> <br/><br/>Chapter 15 Integrated Devices<br/><br/>15.1 Passive Components<br/><br/>15.2 Bipolar Technology<br/><br/>15.3 MOSFET Technology<br/><br/>15.4 MESFET Technology<br/><br/>15.5 Challenges for Nanoelectronics<br/><br/> <br/><br/>Appendix A List of Symbols<br/><br/>Appendix B International Systems of Units (SI Units)<br/><br/>Appendix C Unit Prefixes<br/><br/>Appendix D Greek Alphabet<br/><br/>Appendix E Physical Constants<br/><br/>Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K<br/><br/>Appendix G Properties of Si and GaAs at 300 K<br/><br/>Appendix H Derivation of the Density of States in a Semiconductor<br/><br/>Appendix I Derivation of Recombination Rate for Indirect Recombination<br/><br/>Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode<br/><br/>Appendix K Basic Kinetic Theory of Gases<br/><br/>Appendix L Answers to Selected Problems<br/><br/>Photo credits<br/><br/>Index
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Electronics
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Lee, Ming-Kwei
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Books
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Home library Current library Date acquired Cost, normal purchase price Total Checkouts Full call number Barcode Date last seen Cost, replacement price Price effective from Koha item type Collection code
    Dewey Decimal Classification     BSDU Knowledge Resource Center, Jaipur BSDU Knowledge Resource Center, Jaipur 12/16/2016 719.00   621.381 52 SZE 001629 02/12/2020 719.00 06/02/2017 Books  
    Dewey Decimal Classification     BSDU Knowledge Resource Center, Jaipur BSDU Knowledge Resource Center, Jaipur 12/16/2016 719.00   621.381 52 SZE 001630 02/12/2020 719.00 06/02/2017 Books  
    Dewey Decimal Classification   Not For Loan BSDU Knowledge Resource Center, Jaipur BSDU Knowledge Resource Center, Jaipur 12/16/2016 719.00   621.381 52 SZE 001631 02/12/2020 719.00 06/02/2017 Books Not for Loan