VLSI Fabrication Principles : Silicon and Gallium Arsenide
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TextPublisher number: 2016 | Allied Informatics, JaipurPublication details: Wiley India Pvt. Ltd. India New Delhi 2016,c1994Edition: 2ndDescription: 834ISBN: - 9788126517909
- 621.381 71 GHA
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| 621.381 537 2 RAO Switching Theory and Logic Design | 621.381 548 MOU Principles of Testing Electronic Systems | 621.381 548 MOU Principles of Testing Electronic Systems | 621.381 71 GHA VLSI Fabrication Principles : Silicon and Gallium Arsenide | 621.381 71 GHA VLSI Fabrication Principles : Silicon and Gallium Arsenide | 621.381 71 GHA VLSI Fabrication Principles : Silicon and Gallium Arsenide | 621.381 71 GHA VLSI Fabrication Principles : Silicon and Gallium Arsenide |
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
TABLE OF CONTENTS
· Material Properties
· Phase Diagrams and Solid Solubility
· Crystal Growth and Doping
· Diffusion
· Epitaxy
· Ion Implantation
· Native Films
· Deposited Films
· Etching and Cleaning
· Lithographic Processes
· Device and Circuit Fabrication
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