VLSI Fabrication Principles : Silicon and Gallium Arsenide
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TextPublisher number: 2016 | Allied Informatics, JaipurPublication details: Wiley India Pvt. Ltd. India New Delhi 2016,c1994Edition: 2ndDescription: 834ISBN: - 9788126517909
- 621.381 71 GHA
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| 621.381 531 MON . Printed circuit Board Design Techniques for EMC Compliance | 621.381 535 STA Operational Amplifiers with Linear Integrated Circuits | 621.381 537 2 RAO Switching Theory and Logic Design | 621.381 71 GHA VLSI Fabrication Principles : Silicon and Gallium Arsenide | 621.381 73 MUL Device Electronics for Integrated Circuits | 621.381 ERC Introduction to Digital Systems | 621.381 GRE Digital Electronics |
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
TABLE OF CONTENTS
· Material Properties
· Phase Diagrams and Solid Solubility
· Crystal Growth and Doping
· Diffusion
· Epitaxy
· Ion Implantation
· Native Films
· Deposited Films
· Etching and Cleaning
· Lithographic Processes
· Device and Circuit Fabrication
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