01259nam a2200217Ia 45000010008000000030004000080050017000120080041000290200018000700280037000880400024001250820020001491000022001692450063001912500008002542600056002623000008003185000408003265040291007346500016010250000031OSt20190306141054.0170602s9999    xx            000 0 und d  a9788126517909  q2016bAllied Informatics, Jaipur  bEnglishaBSDUcBSDU  a621.381 71bGHA  aGhandhi, Sorab K. 0aVLSI Fabrication Principles : Silicon and Gallium Arsenide  a2nd  bWiley India Pvt. Ltd. Indiaa New Delhic2016,c1994  a834  aFully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.

   aTABLE OF CONTENTS
·	Material Properties

·	Phase Diagrams and Solid Solubility

·	Crystal Growth and Doping

·	Diffusion

·	Epitaxy

·	Ion Implantation

·	Native Films

·	Deposited Films

·	Etching and Cleaning

·	Lithographic Processes

·	Device and Circuit Fabrication



   aElectronics