01333nam a2200241Ia 4500 12 12 0000031 OSt 20190306141054.0 170602s9999 xx 000 0 und d 9788126517909 2016 Allied Informatics, Jaipur English BSDU BSDU 621.381 71 GHA Ghandhi, Sorab K. VLSI Fabrication Principles : Silicon and Gallium Arsenide 2nd Wiley India Pvt. Ltd. India New Delhi 2016,c1994 834 Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. TABLE OF CONTENTS · Material Properties · Phase Diagrams and Solid Solubility · Crystal Growth and Doping · Diffusion · Epitaxy · Ion Implantation · Native Films · Deposited Films · Etching and Cleaning · Lithographic Processes · Device and Circuit Fabrication Electronics ddc BK 0 0 ddc 0 0 BSDU BSDU 2016-11-19 769.00 0 621.381 71 GHA 000031 2020-02-12 00:00:00 769.00 2017-06-02 BK 0 0 ddc 0 0 BSDU BSDU 2016-11-19 769.00 0 621.381 71 GHA 000032 2020-02-12 00:00:00 769.00 2017-06-02 BK 0 0 ddc 0 1 RB BSDU BSDU 2016-11-19 769.00 0 621.381 71 GHA 000033 2020-02-12 00:00:00 769.00 2017-06-02 BK 0 0 ddc 0 0 BSDU BSDU 2016-12-08 769.00 0 621.381 71 GHA 001918 2020-02-12 00:00:00 769.00 2017-06-02 BK 0 0 ddc 0 0 BSDU BSDU 2016-12-11 769.00 0 621.381 71 GHA 002144 2020-02-12 00:00:00 769.00 2017-06-02 BK