TY  - BOOK
AU  - Ghandhi, Sorab K.
TI  - VLSI Fabrication Principles : Silicon and Gallium Arsenide
SN  - 9788126517909
U1  - 621.381 71 
PY  - 2016///,c1994
CY  -  New Delhi
PB  - Wiley India Pvt. Ltd. India
KW  - Electronics
N1  - Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.

; TABLE OF CONTENTS
·	Material Properties

·	Phase Diagrams and Solid Solubility

·	Crystal Growth and Doping

·	Diffusion

·	Epitaxy

·	Ion Implantation

·	Native Films

·	Deposited Films

·	Etching and Cleaning

·	Lithographic Processes

·	Device and Circuit Fabrication




ER  -