01817nam a2200205Ia 45000010008000000030004000080050017000120080041000290200018000700280037000880400024001250820019001491000022001682450092001902600046002823000008003285040803003365200456011396500016015950001393OSt20190327142025.0170602s9999    xx            000 0 und d  a9788177589771  q2016bAllied Informatics, Jaipur  bEnglishaBSDUcBSDU  a621.38152bPIE  aPierret, Robert F 0aSemiconductor Device Fundamentals : with Computer-based exercises and Homework Problems  bPearson Educationa New Delhic2006,c1996  a792  aContents
PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
R1. Part I Supplement and Review.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes.
PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
R2. Part II Supplement and Review.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
R3. Part III Supplement and Review.  aSalient Features
The computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems
Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, “crib-sheet” –like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots.  aElectronics