Pierret, Robert F creator text xx New Delhi Pearson Education 2006,c1996 9999 monographic und

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792 Salient Features The computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, “crib-sheet” –like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots. Contents PART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. R1. Part I Supplement and Review. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. R2. Part II Supplement and Review. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. R3. Part III Supplement and Review. Electronics 621.38152 PIE 9788177589771 Allied Informatics, Jaipur BSDU 170602 20190327142025.0 0001393 English