VLSI Fabrication Principles : Silicon and Gallium Arsenide
Material type:
TextPublisher number: 2016 | Allied Informatics, JaipurPublication details: Wiley India Pvt. Ltd. India New Delhi 2016,c1994Edition: 2ndDescription: 834ISBN: - 9788126517909
- 621.381 71 GHA
| Item type | Current library | Collection | Call number | Status | Barcode | |
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BSDU Knowledge Resource Center, Jaipur | 621.381 71 GHA (Browse shelf(Opens below)) | Available | 002144 | ||
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BSDU Knowledge Resource Center, Jaipur | 621.381 71 GHA (Browse shelf(Opens below)) | Available | 001918 | ||
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BSDU Knowledge Resource Center, Jaipur | 621.381 71 GHA (Browse shelf(Opens below)) | Available | 000031 | ||
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BSDU Knowledge Resource Center, Jaipur | 621.381 71 GHA (Browse shelf(Opens below)) | Available | 000032 | ||
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BSDU Knowledge Resource Center, Jaipur | Not for Loan | 621.381 71 GHA (Browse shelf(Opens below)) | Not For Loan | 000033 |
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
TABLE OF CONTENTS
· Material Properties
· Phase Diagrams and Solid Solubility
· Crystal Growth and Doping
· Diffusion
· Epitaxy
· Ion Implantation
· Native Films
· Deposited Films
· Etching and Cleaning
· Lithographic Processes
· Device and Circuit Fabrication
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