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VLSI Fabrication Principles : Silicon and Gallium Arsenide

By: Material type: TextPublisher number: 2016 | Allied Informatics, JaipurPublication details: Wiley India Pvt. Ltd. India New Delhi 2016,c1994Edition: 2ndDescription: 834ISBN:
  • 9788126517909
Subject(s): DDC classification:
  • 621.381 71 GHA
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Item type Current library Collection Call number Status Barcode
Books BSDU Knowledge Resource Center, Jaipur 621.381 71 GHA (Browse shelf(Opens below)) Available 002144
Books BSDU Knowledge Resource Center, Jaipur 621.381 71 GHA (Browse shelf(Opens below)) Available 001918
Books BSDU Knowledge Resource Center, Jaipur 621.381 71 GHA (Browse shelf(Opens below)) Available 000031
Books BSDU Knowledge Resource Center, Jaipur 621.381 71 GHA (Browse shelf(Opens below)) Available 000032
Books BSDU Knowledge Resource Center, Jaipur Not for Loan 621.381 71 GHA (Browse shelf(Opens below)) Not For Loan 000033

Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.

TABLE OF CONTENTS
· Material Properties

· Phase Diagrams and Solid Solubility

· Crystal Growth and Doping

· Diffusion

· Epitaxy

· Ion Implantation

· Native Films

· Deposited Films

· Etching and Cleaning

· Lithographic Processes

· Device and Circuit Fabrication



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