000			01333nam a2200241Ia 4500
999			_c12 _d12
001			0000031
003			OSt
005			20190306141054.0
008			170602s9999 xx 000 0 und d
020			_a9788126517909
028			_q2016 _bAllied Informatics, Jaipur
040			_bEnglish _aBSDU _cBSDU
082			_a621.381 71 _bGHA
100			_aGhandhi, Sorab K.
245		0	_aVLSI Fabrication Principles : Silicon and Gallium Arsenide
250			_a2nd
260			_bWiley India Pvt. Ltd. India _a New Delhi _c2016,c1994
300			_a834
500			_aFully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
504			_aTABLE OF CONTENTS · Material Properties · Phase Diagrams and Solid Solubility · Crystal Growth and Doping · Diffusion · Epitaxy · Ion Implantation · Native Films · Deposited Films · Etching and Cleaning · Lithographic Processes · Device and Circuit Fabrication
650			_aElectronics
942			_2ddc _cBK