000			01894nam a2200229Ia 4500
999			_c412 _d412
001			0001393
003			OSt
005			20190327142025.0
008			170602s9999 xx 000 0 und d
020			_a9788177589771
028			_q2016 _bAllied Informatics, Jaipur
040			_bEnglish _aBSDU _cBSDU
082			_a621.38152 _bPIE
100			_aPierret, Robert F
245		0	_aSemiconductor Device Fundamentals : with Computer-based exercises and Homework Problems
260			_bPearson Education _a New Delhi _c2006,c1996
300			_a792
504			_aContents PART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. R1. Part I Supplement and Review. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. R2. Part II Supplement and Review. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. R3. Part III Supplement and Review.
520			_aSalient Features The computer-based exercises and homework problems permit the replacement of plug-and-chug boredom with more challenging realistic problems Other special features include tables that summarize the required reading, difficulty level, and suggested weighting of end-of-chapter problems, “crib-sheet” –like equation summaries in the critical beginning chapters, and direct reproductions of device data and computer-generated plots.
650			_aElectronics
942			_2ddc _cBK